gan hybrid power amplifier HT1818-15A k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 1 / 8 version 1.0 product features applications ? gan on sic hemt ? 2-stage amplifier 50ohms matching ? surface mount hybrid type ? small size & mass ? high efficiency ? rf sub-systems ? base station ? repeater ? 4g/lte system ? small cell description the HT1818-15A is designed for lte repeater & rf sub-systems application frequencies from 1805 ~ 1880mhz this amplifier uses gan hemt technology which performs high breakdown voltage, high efficiency. high in/output impedance, high power density. electrical specifications @ v ds =28v, ta=25 parameter unit min typ max condition frequency range mhz 1805 - 1880 zs = zl = 50 ohm power gain db 30 33 35 amp : idq1 = 50ma idq2 = 105ma gain flatness - 0.7 - input return loss - -9.0 -5.0 pout @ average dbm - 33 - pout @ psat dbm 40.8 42 - pulse width=20us, duty10% aclr* @ bw 10mhz lte (papr 7.5db) dbc - -39 -30 non dpd - -54 - with dpd drain efficiency % 22 25 - pout @ average ids ma - 290 - supply voltage v -3.0 -2.0 gate bias (vgs1 and vgs2) v - 28 - main bias(vds) caution the drain voltage must be supplied to the device after the gate voltage is supplied turn on : turn on the gate voltage supply and last turn on the drain voltage supplies turn off : turn off the drain voltage and last turn off the gate voltage note 1. aclr measured pout=33dbm @ fc 10mhz / 9.015mhz lte 10mhz 1fa papr=7.5db @ 0.01% probability on ccdf, (dpd engine: optichron op6180) 2. ht series have internal dc blocking capacitors at the rf input and output ports mechanical specifications parameter unit typ remark mass g 2 - dimension L 20.5 x 15 x 3.5 - package type : np-1el
gan hybrid power amplifier HT1818-15A k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 2 / 8 version 1.0 absolute maximum ratings parameter unit rating symbol gate-source voltage v -10 ~ 0 vgs1 vgs2 drain-source voltage v 50 vds gate current ma 5.7 ig operating junction temperature c 225 t j operating case temperature c -30 ~ 85 t c storage temperature c -40 ~ 100 t stg maximum rf input level dbm 25 pin operating voltage & input level parameter unit min typ max symbol drain voltage v 27.5 28 28.5 vds gate voltage (on-stage) v - -3 -2 vgs 1 gate voltage (on-stage) v - -3 -2 vgs 2 gate voltage (off-stage) v - -8 - vgs 1 gate voltage (off-stage) v - -8 - vgs 2 idq1 ma 48.5 50 52.5 idq1 idq2 ma 100 105 110 idq2 rf input level dbm - - 20 pin block diagram gan on sic gan on sic
gan hybrid power amplifier HT1818-15A k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 3 / 8 version 1.0 application circuit part list location model no. spec. maker c6, c8 1812c225k101ct 2.2uf / 100v walsin c1, c3 c3216x7r1c106k 10uf / 16v tdk c2, c4, c5, c7 201cha100jsle 10pf temex evaluation board ro4350b 2layer, 30mil rogers
gan hybrid power amplifier HT1818-15A k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 4 / 8 version 1.0 performance charts * bias condition @ idq1= 50ma, idq2= 105ma, ta=25 power gain vs. frequency psat vs. frequency 30 31 32 33 34 35 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 power gain [db] frequency[ghz] power gain @pout=33dbm 39 40 41 42 43 44 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 psat [dbm] frequency[ghz] vds=28v vds=30v aclr vs. frequency efficiency vs. frequency -47 -45 -43 -41 -39 -37 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 aclr [dbc] frequency[ghz] aclr_l @pout=33dbm aclr_u @pout=33dbm 22 23 24 25 26 27 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 efficiency [%] frequency[ghz] drain efficiency @pout=33dbm ids1 vs. ids2 vs. frequency total ids vs. frequency 200 210 220 230 240 250 30 40 50 60 70 80 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 ids2 [ma] ids1 [ma] frequency[ghz] ids1 ids2 250 260 270 280 290 300 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 total ids [ma] frequency[ghz] total ids @pout=33dbm
gan hybrid power amplifier HT1818-15A k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 5 / 8 version 1.0 performance charts * bias condition @ idq1= 50ma, idq2= 105ma, ta=25 power gain vs. output power efficiency vs. output power 28 30 32 34 36 38 30 31 32 33 34 35 power gain [db] output power[dbm] 1.80ghz 1.84ghz 1.88ghz 10 15 20 25 30 35 30 31 32 33 34 35 efficiency [%] output power[dbm] 1.80ghz 1.84ghz 1.88ghz aclr vs. output power ids1 vs. output power -50 -45 -40 -35 -30 -25 30 31 32 33 34 35 aclr [dbc] output power[dbm] 1.80ghz 1.84ghz 1.88ghz *lte 10mhz (papr=7.5db) w/o dpd 30 40 50 60 70 80 30 31 32 33 34 35 ids1 [ma] output power[dbm] 1.80ghz 1.84ghz 1.88ghz ids2 vs. output power 100 150 200 250 300 350 30 31 32 33 34 35 ids2 [ma] output power[dbm] 1.80ghz 1.84ghz 1.88ghz
gan hybrid power amplifier HT1818-15A k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 6 / 8 version 1.0 package dimensions (type: np-1el) * unit: mm[inch] | tolerance: 0.15[.006] top view side view bottom view pin description pin no function pin no function pin no function pin no function 1 rf input 4 vgs1 8 gnd 11 gnd 2 gnd 5 vds 9 gnd 12 gnd 3 gnd 6 vgs2 10 rf output 13 gnd - - 7 vds - - 14 gnd recommended pattern recommended mounting configuration * mounting configuration notes 1. for the proper performance of the device, ground / thermal via holes must be designed to remove heat. 2. to properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. we recommend the mounting scre ws be added near the heatsink to mount the board 3. in designing the necessary rf trace, width will depend upon the pcb material and construction. 4. use 1 oz. copper minimum thickness for the heatsink. 5. do not put solder mask on the backside of the pcb in the region where the board contacts the heatsink 6. we recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance .
gan hybrid power amplifier HT1818-15A k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 7 / 8 version 1.0 precautions this product is a gallium nitride transistor. the gallium nitride transistor requires a negative voltage bias which operates alongside a positive voltage bias. these biases are applied in accordance to the sequence during turn-on and turn-off. the pallet amplifier does not have a built-in bias sequence circ uit. therefore, users need to either apply positive voltages an d negative voltages in the required sequence, or ad d an external bias circuit to this amplifier. the required sequence for power supply is as follows. during turn-on 1. connect gnd. 2. apply vgs1 and vgs2. 3. apply vds. 4. apply the rf power. during turn-off 1. turn off rf power. 2. turn off vds, and then, turn off the vgs1 and vgs2. 3. remove all connections. turn on turn off - sequence timing diagram -
gan hybrid power amplifier HT1818-15A k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 8 / 8 version 1.0 reflow profile * reflow oven settings zone a b c d e f temperature(c) 30 ~ 150 150 ~ 180 180 ~ 220 220 ~ 220 235 ~ 240 2 ~ 6 / sec drop belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec * reflow cycle limit= 1time * measured reflow profile ordering information part number package design HT1818-15A -r (reel) -b (bulk) -evb (evaluation board) revision history part number release date version modification data sheet status HT1818-15A 2013.02.20 1.0 electrical specification (1p) - HT1818-15A 2013.02.20 0.7 application circuit package dimensions reflow profile preliminary HT1818-15A 2012.12.27 0.6 changed part number preliminary rfhic corporation reserves the right to make changes to any prod ucts herein or to discontinue any product at any time without n otice. while product specifications have been thoroughly examined for reliability, rfhic corporation strongly recommends buy ers to verify that the information they are using is accurat e before ordering. rfhic corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including wi thout limitation consequential or incidental damages. rfhic products are not intended for use in life support equipment or application where malfunction of the product can be expect ed to result in personal injury or death. buyer uses or sells such products for any such unintended or unauthorized application, buyer shall i ndemnify, protect and hold rfhic corporat ion and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. sales, inquiries and support should be directed to the local au thorized geographic distributor for rfhic corporation. for custo mers in the us, please contact the us sales team at 919- 677-8780. for all other inquiries, please contact the international sales team at 82-31-250-5078.
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